A simple and controlled single electron transistor based on doping modulation in silicon nanowires

A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect transistor made on silicon-on-insulator thin films. The channel of the transistor is the Coulomb island at low temperature. Two silicon nitride spacers deposited on each side of the gate create a modulation of doping along the nanowire that creates tunnel barriers. Such barriers are fixed and controlled, like in metallic SETs. The period of the Coulomb oscillations is set by the gate capacitance of the transistor and therefore controlled by lithography. The source and drain capacitances have also been characterized. This design could be used to build more complex SET devices.Comment: to be published in Applied Physics Letter

Reconstructed spatial resolution and contrast recovery with Bayesian penalized likelihood reconstruction (Q.Clear) for FDG-PET compared to time-of-flight (TOF) with point spread function (PSF)

BACKGROUND: Bayesian penalized likelihood reconstruction for PET (e.g., GE Q.Clear) aims at improving convergence of lesion activity while ensuring sufficient signal-to-noise ratio (SNR). This study evaluated reconstructed spatial resolution, maximum/peak contrast recovery (CRmax/CRpeak) and SNR of Q.Clear compared to time-of-flight (TOF) OSEM with and without point spread function (PSF) modeling. METHODS: The NEMA IEC Body phantom was scanned five times (3 min scan duration, 30 min between scans, background, 1.5-3.9 kBq/ml F18) with a GE Discovery MI PET/CT (3-ring detector) with spheres filled with 8-, 4-, or 2-fold the background activity concentration (SBR 8:1, 4:1, 2:1). Reconstruction included Q.Clear (beta, 150/300/450), "PSF+TOF4/16" (iterations, 4; subsets, 16; in-plane filter, 2.0 mm), "OSEM+TOF4/16" (identical parameters), "PSF+TOF2/17" (2 it, 17 ss, 2.0 mm filter), "OSEM+TOF2/17" (identical), "PSF+TOF4/8" (4 it, 8 ss, 6.4 mm), and "OSEM+TOF2/8" (2 it, 8 ss, 6.4 mm). Spatial resolution was derived from 3D sphere activity profiles. RC as (sphere activity concentration [AC]/true AC). SNR as (background mean AC/background AC standard deviation). RESULTS: Spatial resolution of Q.Clear150 was significantly better than all conventional algorithms at SBR 8:1 and 4:1 (Wilcoxon, each p < 0.05). At SBR 4:1 and 2:1, the spatial resolution of Q.Clear300/450 was similar or inferior to PSF+TOF4/16 and OSEM+TOF4/16. Small sphere CRpeak generally underestimated true AC, and it was similar for Q.Clear150/300/450 as with PSF+TOF4/16 or PSF+TOF2/17 (i.e., relative differences < 10%). Q.Clear provided similar or higher CRpeak as OSEM+TOF4/16 and OSEM+TOF2/17 resulting in a consistently better tradeoff between CRpeak and SNR with Q.Clear. Compared to PSF+TOF4/8/OSEM+TOF2/8, Q.Clear150/300/450 showed lower SNR but higher CRpeak. CONCLUSIONS: Q.Clear consistently improved reconstructed spatial resolution at high and medium SBR compared to PSF+TOF and OSEM+TOF, but only with beta = 150. However, this is at the cost of inferior SNR with Q.Clear150 compared to Q.Clear300/450 and PSF+TOF4/16/PSF+TOF2/17 while CRpeak for the small spheres did not improve considerably. This suggests that Q.Clear300/450 may be advantageous for the 3-ring detector configuration because the tradeoff between CR and SNR with Q.Clear300/450 was superior to PSF+TOF4/16, OSEM+TOF4/16, and OSEM+TOF2/17. However, it requires validation by systematic evaluation in patients at different activity and acquisition protocols

Size scaling of the addition spectra in silicon quantum dots

We investigate small artificial quantum dots obtained by geometrically controlled resistive confinement in low mobility silicon-on-insulator nanowires. Addition spectra were recorded at low temperature for various dot areas fixed by lithography. We compare the standard deviation of the addition spectra with theory in the high electron concentration regime. We find that the standard deviation scales as the inverse area of the dot and its absolute value is comparable to the energy spacing of the one particle spectrum.Comment: 4 pages, 5 figure

The Bright Side of Coulomb Blockade

We explore the photonic (bright) side of dynamical Coulomb blockade (DCB) by measuring the radiation emitted by a dc voltage-biased Josephson junction embedded in a microwave resonator. In this regime Cooper pair tunneling is inelastic and associated to the transfer of an energy 2eV into the resonator modes. We have measured simultaneously the Cooper pair current and the photon emission rate at the resonance frequency of the resonator. Our results show two regimes, in which each tunneling Cooper pair emits either one or two photons into the resonator. The spectral properties of the emitted radiation are accounted for by an extension to DCB theory.Comment: 4 pages, 4 figures + 3 pages, 1 figure supplementary materia

Superconducting properties of very high quality NbN thin films grown by high temperature chemical vapor deposition

Niobium nitride (NbN) is widely used in high-frequency superconducting electronics circuits because it has one of the highest superconducting transition temperatures ($T_c$ $\sim$ 16.5 K) and largest gap among conventional superconductors. In its thin-film form, the $T_c$ of NbN is very sensitive to growth conditions and it still remains a challenge to grow NbN thin film (below 50 nm) with high $T_c$. Here, we report on the superconducting properties of NbN thin films grown by high-temperature chemical vapor deposition (HTCVD). Transport measurements reveal significantly lower disorder than previously reported, characterized by a Ioffe-Regel ($k_F$$\ell$) parameter of $\sim$ 14. Accordingly we observe $T_c$ $\sim$ 17.06 K (point of 50% of normal state resistance), the highest value reported so far for films of thickness below 50 nm, indicating that HTCVD could be particularly useful for growing high quality NbN thin films

Transformed Dissipation in Superconducting Quantum Circuits

Superconducting quantum circuits must be designed carefully to avoid dissipation from coupling to external control circuitry. Here we introduce the concept of current transformation to quantify coupling to the environment. We test this theory with an experimentally-determined impedance transformation of $\sim 10^5$ and find quantitative agreement better than a factor of 2 between this transformation and the reduced lifetime of a phase qubit coupled to a tunable transformer. Higher-order corrections from quantum fluctuations are also calculated with this theory, but found not to limit the qubit lifetime. We also illustrate how this simple connection between current and impedance transformation can be used to rule out dissipation sources in experimental qubit systems.Comment: 4 pages, 4 figure

Obfuscation for Cryptographic Purposes

An obfuscation of a function F should satisfy two requirements: firstly, using it should be possible to evaluate F; secondly, should not reveal anything about F that cannot be learnt from oracle access to F. Several definitions for obfuscation exist. However, most of them are either too weak for or incompatible with cryptographic applications, or have been shown impossible to achieve, or both. We give a new definition of obfuscation and argue for its reasonability and usefulness. In particular, we show that it is strong enough for cryptographic applications, yet we show that it has the potential for interesting positive results. We illustrat